Enhancement-mode quantum transistors for single electron spin
نویسندگان
چکیده
منابع مشابه
Enhancement-mode quantum transistors for single electron spin
Using an InAs/GaSb composite quantum well, we demonstrate an enhancement mode single electron transistor. With a Hall bar geometry, we show that the device undergoes a transition from accumulation of two-dimensional (2D) holes in GaSb to a complete depletion and finally to an inversion layer of 2D electrons in InAs. When the top-gate area is reduced to nanometer scale, the inversion electrons a...
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ژورنال
عنوان ژورنال: Physica E: Low-dimensional Systems and Nanostructures
سال: 2006
ISSN: 1386-9477
DOI: 10.1016/j.physe.2006.03.041